View STFI34NM60N_8238582.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. july 2013 docid022439 rev 3 1/12 STFI34NM60N n-channel 600 v, 0.092 , 31.5 a mdmesh? ii power mosfet in a i2pakfp package datasheet - production data figure 1. internal schematic diagram features ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance applications ? switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. 1 2 3 i pakfp 2 $0y ' * 6 order code v dss r ds(on) i d p tot STFI34NM60N 600 v 0.105 ? 31.5 a 40 w table 1. device summary order code marking packages packaging STFI34NM60N 34nm60n i 2 pakfp (to-281) tube www.st.com
contents STFI34NM60N 2/12 docid022439 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
docid022439 rev 3 3/12 STFI34NM60N electrical ratings 12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 31.5 (1) 1. limited by package. a i d drain current (continuous) at t c = 100 c 20 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 126 a p tot total dissipation at t c = 25 c 40 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 7a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 345 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (3) 3. i sd 31.5 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature -55 to 150 c t j operating junction temperature 150 table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 3.1 c/w r thj-amb thermal resistance junction-amb max 62.5
electrical characteristics STFI34NM60N 4/12 docid022439 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, tc=125 c 1 100 a a i gss gate body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 14.5 a 0.092 0.105 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 - 2722 - pf c oss output capacitance - 173 - pf c rss reverse transfer capacitance -1.75- pf c oss eq. (1) 1. c oss eq . is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 480 v - 458 - pf t d(on) turn-on delay time v dd = 300 v, i d = 15.75 a, r g =4.7 , v gs =10 v (see figure 18 and 14 ) -18- ns t r rise time - 36 - ns t d(off) turn-off delay time - 104 - ns t f fall time - 73 - ns q g total gate charge v dd = 480 v, i d = 31.5 a v gs =10 v (see figure 15 ) -84-nc q gs gate-source charge - 14 - nc q gd gate-drain charge - 45 - nc r g intrinsic gate resistance f = 1 mhz, gate dc bias=0 test signal level=20 mv open drain -2.9-
docid022439 rev 3 5/12 STFI34NM60N electrical characteristics 12 table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 31.5 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 126 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 31.5 a, v gs =0 - 1.6 v t rr reverse recovery time i sd = 31.5 a, v dd = 60 v di/dt = 100 a/s, (see figure 16 ) - 412 ns q rr reverse recovery charge - 8 nc i rrm reverse recovery current - 39 a t rr reverse recovery time i sd = 12 a,v dd = 60 v di/dt=100 a/s, t j =150 c (see figure 16 ) - 490 ns q rr reverse recovery charge - 10 nc i rrm reverse recovery current - 43 a
electrical characteristics STFI34NM60N 6/12 docid022439 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am09018v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 60 40 20 0 0 10 v ds (v) 20 (a) 5 15 25 80 5v 6v v gs =10v 30 70 50 30 10 am09020v1 i d 60 40 20 0 0 4 v gs (v) 8 (a) 2 6 80 10 30 50 70 v ds =20v am09021v1 v gs 6 4 2 0 0 20 q g (nc) (v) 80 8 40 60 10 v dd =480v i d =31.5a 300 200 100 0 400 v ds (v) 500 v ds 12 am15701v1 r ds(on) 0.092 0.09 0.088 0.086 0 20 i d (a) () 10 0.094 0.096 v gs =10v 5 15 25 30 am15702v1
docid022439 rev 3 7/12 STFI34NM60N electrical characteristics 12 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized b vdss vs temperature figure 13. source-drain diode forward characteristics c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss am09024v1 e oss 1 2 0 0 100 v ds (v) (j) 400 200 300 500 am09025v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a 0.60 am09026v1 r ds(on) 1.3 1.1 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 1.5 1.7 1.9 i d =14.5a 0.9 2.1 am15703v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 i d =1ma am15704v1 v sd 0 10 i sd (a) (v) 5 25 15 20 0.2 0.4 0.6 0.8 t j =-50c t j =150c t j =25c 1 1.2 1.4 30 0 am15705v1
test circuits STFI34NM60N 8/12 docid022439 rev 3 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid022439 rev 3 9/12 STFI34NM60N package mechanical data 12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STFI34NM60N 10/12 docid022439 rev 3 figure 20. i 2 pakfp (to-281) drawing table 7. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b 2.50 2.70 d 2.50 2.75 d1 0.65 0.85 e 0.45 0.70 f 0.75 1.00 f1 1.20 g 4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 uhy$
docid022439 rev 3 11/12 STFI34NM60N revision history 12 5 revision history table 8. document revision history date revision changes 07-nov-2011 1 first release. 19-apr-2012 2 ?units in table 6 : source drain diode have been corrected. ? figure 6 : gate charge vs. gate-source voltage has been ? updated. ? minor text changes. 16-jul-2013 3 ? modified: title, i d and figure 1 in cover page ? modified: i d for t c =20 c and for t c =100 c, i dm in table 2 , note 1 , note 3 in table 2 ? inserted: dv and dt in table 2 and note 4 in table 2 ? modified: i sd , i sdm max values in table 6 and figure 14 , 15 , 16 and 17
STFI34NM60N 12/12 docid022439 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STFI34NM60N

	To Download STFI34NM60N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .